CARACTERITZACIÓ ELECTRIC GATE DIELECTRIC DEVICE MOS WITH CAFM: SIO2 AND HIGH DIELECTRIC PERMITIVITY.Summary: Since its inception about four decades, microelectronic technology has been declining continuously dimensions of the devices, to offer better benefits. Currently, the dimensions of interest devices have entered deep into the nano range. As examples, the length of the channel and the thickness of the gate oxide (SiO2) of transitores MOS is below delos 100nm and about 2nm respectively. Two of the most important problems facing the microelectronics industry to further improve the performance of the devices have their origins in the reduction of the two parameters mentioned above: * As reduce the length of the channel until a few tens of nm * as solving problems associated with the tunnel running so high that takes into gate oxides extremely thin. To reduce the length of the door, and the dimensions of the structures in general, are following two trends: on the one hand continue with the conventional photolithography but increasingly using radiation with a wavelength less, i on the other hand, use techniques such as radically new probe microscopies nearby. The latter is due to highlight the atomic force microscopy (AFM), which allows for local oxidation with minimal lateral dimensions on the order of 10 nm and vertical dimensions below 1nm. * In this thesis has been used by the AFM as grown oxide dielectric gate MOS structures and has been marked with Conductive-AFM (CAFM) both microstructural as electric. It has also been integrated with the AFM oxidation in a standard CMOS process. One of the main strategies that have been proposed to reduce the flow tunnel that is through the gate oxide (which leads to an unacceptable increase in energy consumption of the device) is to replace SiO2 by other materials with greater permitivity (HK materials the English high-k material), such as HfO2 or ZrO2. These materials sH-K to reach the electrical equivalent thickness necessary, but, with a thickness greater than physical, drastically reducing the flow tunnel. This thesis has been: * Featured microstructural and electrically with CAFM some of the materials HK with more likely to replace the SiO2, to expand knowledge about their electrical properties. * Addressed (mainly through CAFM) degradation and dielectric breakdown structures MOS gate dielectric with HK, and models have been proposed for these phenomena.
