TRANSPORTATION ELECTRONIC STRUCTURES HETEROUNION INAIAS / INGAAS: HEMTS AND BALLISTIC DEVICES DIMENSIONS NANAOMETRICAS.Author:
GARCIA VASALLO BEATRIZ.
Year:
2004.
University:
SALAMANCA [
www.usal.es].
Place of defense: FACULTAD DE CIENCIAS.
Place of preparation: FACULTAD DE CIENCIAS.
Summary: We present a study on the operation of devices based on nano dimensions heterostructures InAlAs / InGaAs. On the one hand, explained the origins and consequences of kink in effect transistors HEMT (High Electron Mobility Transistors) channel short built with these materials. On the other hand, investigates a new technology based on nano-sized structures that take advantage of the ballistic electron transport and that can enable the transmission and processing of signals to THz frequencies at room temperature. The technologies of the two types of devices are compatible, so that could be integrated into the same circuit so that the signals they work with the nanodispositivos were amplified by HEMTs. For this study, we use a simulator ensemble Monte Carlo semiclásico the dynamics of carriers docked so autoconsistente with a two-dimensional resolution of the Poisson equation. The comparison of our results with experimental measures show a broad agreement in all cases. It shows that the transport of electrons at room temperature is a cuasibalístico channels In0.7Ga0.3As when its length is less than 200nm, while the intrinsic response to signs of THz frequencies is possible even for structures 400nm. Also note nonlinear characteristics to 300K as a result of the impact and ballistic transport cargo space in nanodispositivos studied: unions T Y, and rectifiers four terminals with a triangular or rhomboid obstacle in its interior. Similarly, identifying the origin of the effect kink (an abnormal increase in the flow of drenador high potential applied to terminals) HEMTs: the accumulation of holes generated by impact ionization mean greater opening of the channel. It involves a very sharp deterioration of the dynamic behavior (increased capacity between gate and source, and output conductance) and noise (both in the flow of drenador as in the door) transistor.
