FABRICATION OF SEMICONDUCTOR NANOSTRUCTURES WITH BANDA BANNED FOR PHOTONS AND THEIR APPLICATION TO DEVICES OPTOELECTRONICOS INTEGRATEDAuthor:
RODRIGUEZ ALIJA ALFONSO.
Year:
2006.
University:
POLITÉCNICA DE MADRID [
www.upm.es].
Place of defense: E.T.S. DE INGE. DE TELECOMUNICACION.
Place of preparation: INSTITUTO DE MICROELECTRONICA DE MADRID.
Summary: The crystals fotónicos are periodic distributions of dielectric constant that allow control of light in micrometrical sizes. The introduction of defects in these structures, breaking its periodic symmetry, gives them new properties relevant to the conduct of optoelectronic devices, such as confinement and guiding light in regions of comparable size to the wavelength. A large number of works carried out on crystals fotónicos analyzed the influence of various factors such as the parameter network, radio, etc. ... . However, none of them studied experimentally the effect of the third dimension in the issuance of photonic cavities. This thesis has studied the effect of variation of the third dimension (the thickness of the sheet) in the issuance of nano and microcavities of different sizes made on a network of triangular glass fotónico. To achieve these objectives, previously has developed a manufacturing process and has carried out experimental assembly of a system characterization microfotoluminiscencia. In this sense, this is the first Doctoral Thesis contribution to be introduced in Spain on the manufacture and characterization of crystals fotónicos two-dimensional materials on semiconductor III-V. The combination of different cavities H1, formed by removing a single hole in the network triangular, rectangular in a network leading to a new network structure known as Phase Suzuki. This network provides a very flat photonic band along one of its high symmetry directions, being of great interest for obtaining âluz lentaâ. Through the characterization by microfotoluminiscencia depending on the angle of detection have been obtained from an experimental plot of the bands between the addresses of the network X2-Gamma-X1 and has found a group velocity around 160 times smaller than the light along the direction Gamma-X1. The theoretical calculations made by JLG reproduced very good agreement with the results obtained. Cavidades resonant formed by the combination of linear defects (guides glass fotónico) have been studied, noting that these structures shaped ring presented laser emission MT. New structures shaped deanillo including nanocavidades H1 in the corners have been designed, fabricated and characterized. These new structures have been obtained with a monomodal laser emission reduction modes side of over 20 dBm. Finally, this thesis has led to a new line of research at the Institute of Microelectronics in Madrid, generating new methods and techniques of manufacture and characterization which constitute the basis for development of new research projects on topics such as highly topical issuers photon singles and quantum information.
